STF14NM50N, STI14NM50N,
STP14NM50N
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs
in TO-220FP, I²PAK and TO-220 packages
Datasheet - production data
Features
Order codes
2
STI14NM50N
TO-220FP
TAB
RDS(on)
max
ID
550 V
0.32 Ω
12 A
STF14NM50N
3
1
VDS @
TJmax
STP14NM50N
TAB
• 100% avalanche tested
• Low input capacitance and gate charge
I2PAK
3
12
3
TO-220
1
2
Figure 1. Internal schematic diagram
• Low gate input resistance
Applications
• Switching applications
' 7$%
Description
These devices are N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
*
6
$0Y
Table 1. Device summary
Order codes
Marking
Package
STF14NM50N
STI14NM50N
TO-220FP
14NM50N
STP14NM50N
June 2014
This is information on a product in full production.
Packaging
I2PAK
Tube
TO-220
DocID16832 Rev 7
1/18
www.st.com
18
Contents
STF14NM50N, STI14NM50N, STP14NM50N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
2/18
.............................................. 9
4.1
TO-220FP, STF14NM50N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2
I2PAK, STI14NM50N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3
TO-220, STP14NM50N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
DocID16832 Rev 7
STF14NM50N, STI14NM50N, STP14NM50N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
I²PAK, TO-220
TO-220FP
VDS
Drain-source voltage
500
V
VGS
Gate-source voltage
± 25
V
ID
ID
IDM
(2)
PTOT
dv/dt (3)
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
8
48
Total dissipation at TC = 25 °C
90
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
8
Drain current (pulsed)
VISO
12 (1)
12
(1)
48
(1)
25
15
A
A
A
W
V/ns
2500
V
- 55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD ≤ 12 A, di/dt ≤ 400 A/s,VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Table 3. Thermal data
Value
Symbol
Parameter
Unit
TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb
I²PAK
5
Thermal resistance junction-ambient max
TO-220
1.39
°C/W
62.5
°C/W
Table 4. Avalanche data
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
4
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
172
mJ
DocID16832 Rev 7
3/18
Electrical characteristics
2
STF14NM50N, STI14NM50N, STP14NM50N
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
VDS = 500 V
drain current (VGS = 0) VDS = 500 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Min.
Typ.
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
Unit
500
V
1
100
µA
µA
± 100
nA
3
4
V
0.28
0.32
Ω
Min.
Typ.
Max.
Unit
VGS = ± 25 V
VGS(th)
Max.
2
VGS = 10 V, ID = 6 A
Table 6. Dynamic
Symbol
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
816
60
3
-
pF
pF
pF
Equivalent output
capacitance
VDS = 0 to 50 V, VGS = 0
-
157
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
4.5
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD =400 V, ID =12 A,
VGS =10 V (see Figure 16)
-
27
5
15
-
nC
nC
nC
Ciss
Coss
Crss
Coss eq. (1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/18
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 400 V, ID = 12 A,
RG =4.7 Ω, VGS = 10 V
(see Figure 17)
DocID16832 Rev 7
Min.
Typ.
-
12
16
42
22
Max.
Unit
-
ns
ns
ns
ns
STF14NM50N, STI14NM50N, STP14NM50N
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
trr
Qrr
IRRM
trr
Qrr
IRRM
Test conditions
Min.
Typ.
Max. Unit
-
12
48
A
A
ISD = 12 A, VGS = 0
-
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 20)
-
252
2.8
22
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs,
VDD = 60 V, TJ = 150 °C
(see Figure 20)
-
300
3.3
22.2
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID16832 Rev 7
5/18
Electrical characteristics
2.1
STF14NM50N, STI14NM50N, STP14NM50N
Electrical characteristics (curves)
Figure 2. Safe operating area for I²PAK, TO-220 Figure 3. Thermal impedance for I²PAK, TO-220
AM07199v1
is
ID
(A)
on
)
10µs
S(
Op
Lim era
ite tion
d
by in th
m is
ax ar
RD ea
10
1
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.1
0.1
10
1
100
VDS(V)
Figure 4. Safe operating area for TO-220FP
Figure 5. Thermal impedance for TO-220FP
AM07201v1
ID
(A)
is
ea )
ar S(on
D
th R
in ax
n
it o y m
b
ra
pe ed
O imit
L
10
is
1
10µs
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
1
10
100
VDS(V)
Figure 6. Output characteristics
Figure 7. Transfer characteristics
AM07202v1
ID
(A)
VGS=10V
25
AM07203v1
ID
(A)
25
VDS=18V
20
20
6V
15
15
10
10
5V
5
0
0
6/18
5
10
15
20
5
VDS(V)
DocID16832 Rev 7
0
0
2
4
6
8
10 VGS(V)
STF14NM50N, STI14NM50N, STP14NM50N
Electrical characteristics
Figure 8. Normalized V(BR)DSS vs temperature
AM09028v1
V(BR)DSS
(norm)
AM07205v1
RDS(on)
(Ohm)
ID=1mA
1.10
Figure 9. Static drain-source on-resistance
0.300
1.08
VGS=10V
0.295
1.06
0.290
1.04
1.02
0.285
1.00
0.280
0.98
0.275
0.96
0.94
0.92
-50 -25
0.270
0
25
50
75 100
TJ(°C)
Figure 10. Capacitance variations
4
2
6
8
12
10
ID(A)
Figure 11. Gate charge vs gate-source voltage
AM07206v1
C
(pF)
0.265
0
AM07204v1
VDS
VGS
(V)
12
VDS
1000
Ciss
VDD=400V
(V)
400
ID=12A
350
10
300
8
250
100
150
4
10
Crss
1
0.1
200
6
Coss
1
100
10
AM07208v1
VGS(th)
(norm)
50
0
VDS(V)
Figure 12. Normalized gate threshold voltage vs
temperature
100
2
0
5
10
15
20
25
30
0
Qg(nC)
Figure 13. Normalized on-resistance vs
temperature
AM07209v1
RDS(on)
(norm)
ID=250µA
1.10
2.1
1.00
ID=6A
1.7
VGS=10 V
0.90
1.3
0.80
0.9
0.70
-50 -25
0
25
50
75 100
TJ(°C)
0.5
-50 -25
DocID16832 Rev 7
0
25
50
75 100
TJ(°C)
7/18
Electrical characteristics
STF14NM50N, STI14NM50N, STP14NM50N
Figure 14. Source-drain diode forward
characteristics
AM15616v1
VSD
(V)
1.4
TJ= -50 °C
1.2
TJ= 25 °C
1
0.8
TJ= 150 °C
0.6
0.4
0.2
0
0 1 2 3 4 5 6 7 8 9 10 11 ISD(A)
8/18
DocID16832 Rev 7
STF14NM50N, STI14NM50N, STP14NM50N
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 17. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 18. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
DocID16832 Rev 7
10%
AM01473v1
9/18
Package mechanical data
4
STF14NM50N, STI14NM50N, STP14NM50N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/18
DocID16832 Rev 7
STF14NM50N, STI14NM50N, STP14NM50N
4.1
Package mechanical data
TO-220FP, STF14NM50N
Figure 21. TO-220FP drawing
7012510_Rev_K_B
DocID16832 Rev 7
11/18
Package mechanical data
STF14NM50N, STI14NM50N, STP14NM50N
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
12/18
Max.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID16832 Rev 7
STF14NM50N, STI14NM50N, STP14NM50N
4.2
Package mechanical data
I2PAK, STI14NM50N
Figure 22. I²PAK (TO-262) drawing
0004982_Rev_H
DocID16832 Rev 7
13/18
Package mechanical data
STF14NM50N, STI14NM50N, STP14NM50N
Table 10. I²PAK (TO-262) mechanical data
mm.
DIM.
min.
14/18
typ
max.
A
4.40
4.60
A1
2.40
2.72
b
0.61
0.88
b1
1.14
1.70
c
0.49
0.70
c2
1.23
1.32
D
8.95
9.35
e
2.40
2.70
e1
4.95
5.15
E
10
10.40
L
13
14
L1
3.50
3.93
L2
1.27
1.40
DocID16832 Rev 7
STF14NM50N, STI14NM50N, STP14NM50N
4.3
Package mechanical data
TO-220, STP14NM50N
Figure 23. TO-220 type A drawing
BW\SH$B5HYB7
DocID16832 Rev 7
15/18
Package mechanical data
STF14NM50N, STI14NM50N, STP14NM50N
Table 11. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
16/18
Max.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID16832 Rev 7
STF14NM50N, STI14NM50N, STP14NM50N
5
Revision history
Revision history
Table 12. Document revision history
Date
Revision
26-Nov-2009
1
First release.
02-Dec-2009
2
Inserted table footnote Table 3: Thermal data.
22-Jul-2010
3
Document status promoted from preliminary data to datasheet.
06-Apr-2011
4
Updated EAS in Table 2.
5
Updated Figure 1: Internal schematic diagram,Table 1: Device
summary, Table 2: Absolute maximum ratings, Table 3: Thermal
data, Table 5: On /off states.
Updated Section 4: Package mechanical data.
Minor text changes.
6
– Minor text changes
– Added: Figure 14
– Updated: Section 4: Package mechanical data only for DPAK
package
7
– The root part numbers STB14NM50N and STD14NM50N have
been moved to a separate datasheet
– Updated Coss eq. in Table 6: Dynamic
– Updated: Section 4.3: TO-220, STP14NM50N
– Minor text changes
30-Oct-2012
07-Feb-2013
05-Jun-2014
Changes
DocID16832 Rev 7
17/18
STF14NM50N, STI14NM50N, STP14NM50N
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