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STF14NM65N

STF14NM65N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78

  • 描述:

    MOSFET N-CH 650V 12A TO-220FP

  • 数据手册
  • 价格&库存
STF14NM65N 数据手册
STB14NM65N, STF14NM65N STI14NM65N,STP14NM65N,STW14NM65N N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features Type VDSS (@TJmax) RDS(on) max ID STI14NM65N 710 V < 0.38 Ω 12 A STB14NM65N 710 V < 0.38 Ω 12 A STF14NM65N 710 V < 0.38 Ω STP14NM65N 710 V < 0.38 Ω 12 A STW14NM65N 710 V < 0.38 Ω 12 A 12 A 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance o r P 1 I²PAK 3 D²PAK e t le 2 1 o s b O ) Figure 1. 3 3 1 2 TO-220FP Internal schematic diagram s ( t c Switching applications Description c u d TO-220 TO-247 ■ ■ 2 (1) 1. Limited only by maximum temperature allowed Application ) s t( 3 12 3 1 u d o r P e This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. t e l o s b O Table 1. Device summary Order codes Marking Package Packaging STI14NM65N 14NM65N I²PAK Tube STB14NM65N 14NM65N D²PAK Tape and reel STF14NM65N 14NM65N TO-220FP Tube STP14NM65N 14NM65N TO-220 Tube STW14NM65N 14NM65N TO-247 Tube October 2008 Rev 2 1/18 www.st.com 18 Contents STB/F/I/P/W14NM65N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 ) s t( c u d e t le o s b O ) s ( t c u d o r P e t e l o s b O 2/18 o r P STB/F/I/P/W14NM65N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220, TO-247 D²PAK, I²PAK Unit TO-220FP VDS Drain-source voltage (VGS=0) 650 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 12 ID Drain current (continuous) at TC = 100 °C 7.6 IDM (2) Drain current (pulsed) 48 PTOT Total dissipation at TC = 25 °C dv/dt (3) l o s VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature TJ Pr e t e ) (s uc od 125 Peak diode recovery voltage slope A 7.6 (1) A 48(1) A 30 W 15 V/ns -- Ob ) s t( 12(1) 2500 V -55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed t c u 2. Pulse width limited by safe operating area 3. ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS d o r Table 3. Thermal data P e Symbol s b O t e l o Value Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Rthj-pcb Thermal resistance junction-pcb max Tl Table 4. Symbol Unit TO-220 I²PAK D²PAK TO-247 1 62.5 -- Maximum lead temperature for soldering purposes -- TO-220FP 4.2 °C/W -- 50 62.5 °C/W 30 -- -- °C/W 300 °C Avalanche characteristics Parameter IAS Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD= 50 V) Max value Unit 3 A 300 mJ 3/18 Electrical characteristics 2 STB/F/I/P/W14NM65N Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 dv/dt (1) Drain source voltage slope VDD = 520 V, ID=12 A, VGS=10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 6 A Symbol O Parameter t c u VDS=15 V, ID = 6A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance ) s t( V/ns 1 100 µA µA ±100 nA 4 V c u d ro 2 3 Ω 0.330 0.380 Min. Typ. Max. Unit 10 S VDS = 50 V, f = 1 MHz, VGS = 0 1300 90 8 pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 520 V 150 pF Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 12 A, VGS = 10 V, (see Figure 19) 45 7 25 nC nC nC od r P e Qg Qgs Qgd Unit V 30 eP Test conditions Forward transconductance Coss eq(2) Max. 650 t e l o gfs (1) let o s b ) (s Dynamic Typ. s b O 1. Characteristic value at turn off on inductive load Table 6. Min. 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/18 STB/F/I/P/W14NM65N Table 7. Electrical characteristics Switching times Symbol td(on) tr td(off) tf Table 8. Parameter Turn-on delay time Rise time Turn-off delay time Fall time ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Min Typ Max 11 13 55 20 VDD =325 V, ID = 6 A RG = 4.7 Ω VGS = 10 V (see Figure 18) Unit ns ns ns ns Source drain diode Symbol ISD Test conditions Parameter Test conditions Min Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 12 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 100 V (see Figure 20) Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 100 V, TJ = 150 °C (see Figure 20) o s b e t le Typ Max Unit 12 48 A A 1.3 V o r P c u d ) s t( 390 5 25 ns µC A 530 7 25 ns µC A O ) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% s ( t c u d o r P e t e l o s b O 5/18 Electrical characteristics STB/F/I/P/W14NM65N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK / I²PAK Figure 3. Thermal impedance for TO-220 / D²PAK / I²PAK ) s t( c u d Figure 4. Safe operating area for TO-220FP e t le Figure 5. o s b O ) s ( t c u d o r P e t e l o s b O 6/18 o r P Thermal impedance for TO-220FP STB/F/I/P/W14NM65N Figure 6. Electrical characteristics Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 ) s t( Figure 8. Output characteristics Figure 9. c u d o r P Transfer characteristics e t le o s b O ) s ( t c u d o r P e t e l o Figure 10. Transconductance s b O Figure 11. Static drain-source on resistance 7/18 Electrical characteristics STB/F/I/P/W14NM65N Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations ) s t( Figure 14. Normalized gate threshold voltage vs temperature c u d o r P Figure 15. Normalized on resistance vs temperature e t le o s b O ) s ( t c u d o r P e t e l o Figure 16. Source-drain diode forward characteristics s b O 8/18 Figure 17. Normalized BVDSS vs temperature STB/F/I/P/W14NM65N 3 Test circuit Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit ) s t( c u d e t le o r P Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit o s b O ) s ( t c u d o r P e t e l o bs Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform O 9/18 Package mechanical data 4 STB/F/I/P/W14NM65N Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s t( c u d e t le o s b O ) s ( t c u d o r P e t e l o s b O 10/18 o r P STB/F/I/P/W14NM65N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 Typ 1.27 0.050 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 ) s ( ct 3.85 2.95 0.147 0.104 ) s t( uc d o r P e et l o s b O - 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Max 0.181 0.034 0.066 0.027 0.62 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 u d o r P e t e l o s b O 11/18 Package mechanical data STB/F/I/P/W14NM65N TO-220FP mechanical data mm. DIM. Min. A 4.4 inch Typ. Max. Min. Typ. 4.6 0.173 0.181 Max. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 E 0.45 0.7 0.017 F 0.75 1 0.030 F1 1.15 1.7 0.045 ) s t( F2 1.15 1.7 0.045 G 4.95 5.2 0.195 G1 2.4 2.7 0.094 H 10 10.4 0.393 L2 28.6 L4 9.8 L5 2.9 L6 15.9 L7 9 Ø 3 30.6 o s b 10.6 O ) s ( t c r P e 0.630 1.126 1.204 .0385 0.417 0.114 0.141 16.4 0.626 0.645 9.3 0.354 0.366 3.2 0.118 0.126 E D A L6 F2 H G G1 F F1 L7 O L2 12/18 0.067 0.204 0.106 L3 bs 0.067 0.409 B t e l o 0.039 3.6 u d o r P e uc od let 16 L3 0.108 0.027 L5 1 23 L4 STB/F/I/P/W14NM65N Package mechanical data TO-262 mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 Typ 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 e t le Typ Max ) s t( c u d o r P 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 o s b O ) s ( t c u d o r P e t e l o s b O 13/18 Package mechanical data STB/F/I/P/W14NM65N D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 5.28 15.85 2.69 2.79 1.40 1.75 0.4 0° ) s ( ct u d o r P e t e l o s b O 0079457_M 14/18 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 -O 8° Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 ) s t( c u d o r P 0.409 0.1 0.192 0.590 0.099 0.090 0.05 0.051 e t le o s b Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 0° 8° STB/F/I/P/W14NM65N Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 E 15.45 ) s t( 5.45 14.20 L1 3.70 c u d 20.15 e L Max. 5.15 e t le so L2 o r P 15.75 14.80 4.30 18.50 øP 3.55 øR 4.50 S ) s ( ct b O - 3.65 5.50 5.50 u d o r P e t e l o s b O 15/18 Packaging mechanical data 5 STB/F/I/P/W14NM65N Packaging mechanical data D2PAK FOOTPRINT ) s t( c u d e t le o r P TAPE AND REEL SHIPMENT so )- s ( t c du so e t e l Ob o r P mm 16/18 inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 MAX. 0.449 0.456 F 11.4 11.6 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. Ob REEL MECHANICAL DATA 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB/F/I/P/W14NM65N 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 15-Feb-2008 1 First release 14-Oct-2008 2 Table 4: Avalanche characteristics has been corrected. ) s t( c u d e t le o r P o s b O ) s ( t c u d o r P e t e l o s b O 17/18 STB/F/I/P/W14NM65N ) s t( Please Read Carefully: c u d Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18