LL4150-M
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diodes
• Low forward voltage drop
• High forward current capability
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• High speed switch and general purpose use in computer
and industrial applications
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
MECHANICAL DATA
Case: MiniMELF (SOD-80)
Weight: approx. 31 mg
Cathode band color: black
Packaging codes / options:
08/2.5K per 7" reel (8 mm tape),12.5K/box
18/10K per 13" reel (8 mm tape),10K/box
PARTS TABLE
PART
LL4150-M
ORDERING CODE
TYPE MARKING
CIRCUIT CONFIGURATION
REMARKS
LL4150-M-08 or LL4150-M-18
-
Single
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VRRM
50
V
VR
50
V
tp = 1 μs
IFSM
4
A
IF
600
mA
VR = 0
IF(AV)
300
mA
Ptot
500
mW
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Forward continuous current
Average forward current
Power dissipation
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
TEST CONDITION
SYMBOL
VALUE
UNIT
On PC board
50 mm x 50 mm x 1.6 mm
RthJA
300
K/W
Tj
175
°C
Storage temperature range
Tstg
-65 to +175
°C
Operating temperature range
Top
-55 to +175
°C
Rev. 1.2, 15-Nov-2021
Document Number: 85905
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
LL4150-M
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
MAX.
UNIT
IF = 1 mA
VF
0.540
0.620
V
IF = 10 mA
VF
0.660
0.740
V
IF = 50 mA
VF
0.760
0.860
V
IF = 100 mA
VF
0.820
0.920
V
IF = 200 mA
VF
0.870
1
V
VR = 50 V
IR
100
nA
Forward voltage
Reverse current
Diode capacitance
TYP.
VR = 50 V, Tj = 150 °C
IR
100
μA
VR = 0, f = 1 MHz, VHF = 50 mV
CD
2.5
pF
IF = IR = 10 mA to 100 mA,
iR = 0.1 x IR, RL = 100 Ω
trr
4
ns
Reverse recovery time
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
Scattering Limit
IF - Forward Current (mA)
IR - Reverse Current (µA)
100
10
1
0.1
VR = 50 V
0.01
0
94 9100
100
40
80
120
160
Scattering Limit
10
1
TJ = 25 °C
0.1
200
0
TJ - Junction Temperature (°C)
0.4
0.8
1.2
1.6
2.0
VF - Forward Voltage (V)
94 9162
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 1 - Reverse Current vs. Junction Temperature
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF (SOD-80)
1.6 (0.063)
1.4 (0.055)
Cathode indentification
*
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
* The gap between plug and glass can
be either on cathode or anode side
2.5 (0.098) max.
1.25 (0.49) min.
2 (0.079) min.
Foot print recommendation:
5 (0.197) ref.
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
Rev. 1.2, 15-Nov-2021
Document Number: 85905
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2022
1
Document Number: 91000