YJD25N10A

RoHS YJD25N10A COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS= 10V) ● RDS(ON)( at VGS= 4.5V) ● 100% EAS Tested ● 100% ▽VDS Tested 100V 25A ＜52mohm ＜56mohm General Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) ● Moisture Sensitivity Level 1 ● Epoxy Meets UL 94 V-0 Flammability Rating ● Halogen Free Applications ● DC-DC Converters ● Power management functions ● Backlighting ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 100 V Gate-source Voltage VGS ±20 V 25 TC=25℃ Drain Current A ID 16 TC=100℃ Pulsed Drain Current A IDM 100 A 45 TC=25℃ Total Power Dissipation W PD 18 TC=100℃ Single Pulse Avalanche Energy B EAS 9.9 mJ Thermal Resistance Junction-to-Case RθJC 2.78 ℃/ W TJ ,TSTG -55～+150 ℃ Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJD25N10A F1/F2 YJD25N10A 2500 / 25000 13“ reel 1/7 S-E656 Rev.3.1,19-Mar-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD25N10A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 Zero Gate Voltage Drain Current IDSS Typ Max Units Static Parameter Gate-Body Leakage Current TJ=25℃ 1 TJ=150℃ 100 μA VDS=100V,VGS=0V IGSS VGS= ±20V, VDS=0V Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage Maximum Body-Diode Continuous Current VSD V ±100 nA 1.8 3.0 V VGS= 10V, ID=10A 43 52 VGS= 4.5V, ID=8A 46 56 IS=25A,VGS=0V 0.8 1.2 V 25 A 1.1 mΩ IS Dynamic Parameters 2071 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 54 Total Gate Charge Qg 51.4 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr VDS=50V,VGS=0V,f=1MHZ 73 pF Switching Parameters VGS=10V,VDS=50V,ID=10A 9.1 nC 11.5 35.3 IF=10A, di/dt=100A/us Reverse Recovery Time trr 38 Turn-on Delay Time tD(on) 10 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time VGS=10V,VDD=50V, ID=2A RGEN=3Ω tf 19 ns 42 26 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. C. Tj=25℃, VDD=50V, VG=10V, L=0.5mH, IAS=6.3A RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the soldermounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 2/7 S-E656 Rev.3.1,19-Mar-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD25N10A ■ Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance vs. Junction Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge 3/7 S-E656 Rev.3.1,19-Mar-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD25N10A ID-Drain Current (A) 30 20 10 0 -50 0 50 100 150 Tc-Case Temperature (℃) Figure 8. Maximum Continuous Drain Current vs Case Temperature Figure 7. Safe Operation Area Figure 9. Normalized Maximum Transient Thermal Impedance 4/7 S-E656 Rev.3.1,19-Mar-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD25N10A Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 5/7 S-E656 Rev.3.1,19-Mar-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD25N10A ■ TO-252-B Package information θ TOP VIEW SIDE VIEW θ BOTTOM VIEW UNIT：mm SUGGESTED SOLDER PAD LAYOUT NOTE: 1.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS. 2.TOLERANCE 0.1mm UNLESS OTHERWISE SPECIFIED. 3.THE PAD LAYOUT IS FOR REFERENCE PURPOSES ONLY. 6/7 S-E656 Rev.3.1,19-Mar-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD25N10A Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 7/7 S-E656 Rev.3.1,19-Mar-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com