YJD45G10A-F1-0000HF

RoHS YJD45G10A COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 100V 45A ＜17 mohm ＜21.5 mohm General Description ● Low RDS(on) & FOM ● Extremely low switching loss ● Excellent stability and uniformity ● Fast switching and soft recovery Applications ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 100 V Gate-source Voltage VGS ±20 V 45 TC=25℃ Drain Current ID A 28.5 TC=100℃ Pulsed Drain Current A IDM 180 A Avalanche energy B EAS 81 mJ 72 Tc=25℃ Total Power Dissipation C PD W 28.8 Tc=100℃ Junction and Storage Temperature Range TJ ,TSTG ℃ -55～+150 ■Thermal resistance Parameter Symbol Thermal Resistance Junction-to-Ambient D t≤10S Typ Max 15 20 40 50 1.35 1.7 Units RθJA Thermal Resistance Junction-to-Ambient D Steady-State Thermal Resistance Junction-to-Case Steady-State RθJC ℃/W ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJD45G10A F1 YJD45G10A 2500 / 25000 13”Reel 1/6 S-E402 Rev.3.0,25-Jan-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD45G10A ■ Electrical Characteristics (Tj=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 Zero Gate Voltage Drain Current IDSS VDS=100,VGS=0V 1 μA IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.8 3 V VGS= 10V, ID=20A 14 17 mΩ Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=20A 17 21.5 mΩ 1.3 V 45 A Static Parameter Gate-Body Leakage Current Diode Forward Voltage VSD Maximum Body-Diode Continuous Current IS Gate resistance RG 1 V IS=20A,VGS=0V f= 1 MHz, Open drain 1 Ω Dynamic Parameters Input Capacitance Ciss 1135 Output Capacitance Coss Reverse Transfer Capacitance Crss 18 Total Gate Charge Qg 16 Gate-Source Charge Qgs VDS=50V,VGS=0V,f=1MHZ 399 pF Switching Parameters VGS=10V,VDS=50V,ID=25A 5.6 nC Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr 2.4 42 IF=20A, di/dt=100A/us Reverse Recovery Time trr 39.8 Turn-on Delay Time tD(on) 39.2 Turn-on Rise Time tr 11 ns VGS=10V, VDD=50V,ID=25A RGEN=2.2Ω Turn-off Delay Time Turn-off fall Time A. B. C. D. tD(off) 53.2 tf 15.8 Repetitive rating; pulse width limited by max. junction temperature. VDD=50V, RG=25Ω, L=0.5mH, IAS=25A,. Pd is based on max. junction temperature, using junction-case thermal resistance. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 2/6 S-E402 Rev.3.0,25-Jan-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD45G10A ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. : On-Resistance vs. Drain Current and Gate Voltage Figure6.Normalized On-Resistance 3/6 S-E402 Rev.3.0,25-Jan-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD45G10A Figure7. Drain current Figure8.Safe Operation Area Figure9.Normalized Maximum Transient thermal impedance 4/6 S-E402 Rev.3.0,25-Jan-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD45G10A ■ TO-252 Package information 5/6 S-E402 Rev.3.0,25-Jan-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD45G10A Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 6/6 S-E402 Rev.3.0,25-Jan-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com