YJD45G10AQ

RoHS YJD45G10AQ COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 100V 45A ＜17mΩ ＜21.5mΩ General Description ● Low RDS(on) & FOM ● Extremely low switching loss ● Excellent stability and uniformity ● Fast switching and soft recovery ● Part no. with suffix “Q” means AEC-Q101 qualified Applications ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply ● DC-DC convertor ■ Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 100 V Gate-source Voltage VGS ±20 V 7 TA=25℃ 4.5 TA=100℃ Drain Current Avalanche energy A ID Pulsed Drain Current TC=25℃ 45 TC =100℃ 28 A B IDM 180 A EAS 90 mJ 2.5 TA=25℃ 1 TA=100℃ Total Power Dissipation Unit C W PD TC=25℃ 73 TC =100℃ 29 Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ 1/9 S-B2249 Rev.2.0,15-Feb-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD45G10AQ ■Thermal resistance Parameter Thermal Resistance Junction-to-Ambient D Symbol Typ Max Steady-State RθJA 40 50 Steady-State RθJC 1.4 1.7 Units ℃/W Thermal Resistance Junction-to-Case ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJD45G10AQ F1 YJD45G10A 2500 / 25000 13”Reel 2/9 S-B2249 Rev.2.0,15-Feb-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD45G10AQ ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 - - V VDS=100V, VGS=0V - - 1 Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V, Tj=150℃ - - 100 IGSS VGS= ±20V, VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.0 1.8 2.5 V VGS=10V, ID=22.5A - 14 17 Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=20A - 17 21.5 IS=22.5A, VGS=0V - 0.9 1.2 V - - 45 A - 1.4 - Ω - 1165 - - 265 - Static Parameter Gate-Body Leakage Current Diode Forward Voltage VSD Maximum Body-Diode Continuous Current IS Gate resistance RG μA mΩ f=1MHz, Open drain Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 8 - Total Gate Charge Qg - 19 - Gate-Source Charge Qgs - 6 - Gate-Drain Charge Qgd - 3 - Reverse Recovery Charge Qrr - 45 - nC trr - 40 - ns Turn-on Delay Time tD(on) - 40 - Turn-on Rise Time tr - 12 - Turn-off Delay Time tD(off) - 55 - - 16 - VDS=50V, VGS=0V, f=1MHz pF Switching Parameters VGS=10V, VDS=50V, ID=22.5A nC IF=22.5A, di/dt=100A/us Reverse Recovery Time Turn-off fall Time A. B. C. D. VGS=10V, VDD=50V, ID=22.5A RGEN=2.2Ω tf ns Repetitive rating; pulse width limited by max. junction temperature. TJ=25℃, VDD=50V, VG=10V, RG=25Ω, L=0.5mH, IAS=19A. Pd is based on max. junction temperature, using junction-case thermal resistance. The value of RθJA is measured with the device mounted on the minimum recommend pad size, in the still air environment with TA =25℃. The maximum allowed junction temperature of 150℃. The value in any given application depends on the user's specific board design. 3/9 S-B2249 Rev.2.0,15-Feb-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD45G10AQ ■Typical Electrical and Thermal Characteristics Diagrams 150 VGS= 10V 9V 8V 7V 6V Tj=25℃ VDS=5V -55℃ ID-Drain Current (A) ID-Drain Current (A) 150 5V 100 4V 50 25℃ 100 150℃ 50 3V 0 0 0 1 2 3 4 1 5 2 VDS-Drain to Source Voltage (V) Figure 1. Output Characteristics C-Capacitance (pF) VGS-Gate to Source Voltage (V) 10 Ciss Coss 100 Crss 10 1 0 20 40 60 5 80 VDS=50V ID=22.5A Tj=25℃ 8 6 4 2 0 100 0 5 VDS-Drain to Source Voltage (V) 10 15 20 Qg-Total Gate Charge (nC) Figure 3. Capacitance Characteristics Figure 4. Gate Charge 2.5 RDS(on)-Drain to Source Resistance Normalized 100 RDS(on)-Drain to Source resistance (mΩ) 4 Figure 2. Transfer Characteristics 10000 1000 3 Vgs-Gate to Source Voltage (V) 80 60 40 20 ID=22.5A Tj=25℃ 3 2 1.5 1 0.5 0 2 Vgs=10V 4 5 6 7 8 9 -75 10 -25 25 75 125 175 Tj-Junction Temperature (℃) VGS-Gate to Source Voltage (V) Figure 5. On-Resistance vs Gate to Source Voltage Figure 6. Normalized On-Resistance 4/9 S-B2249 Rev.2.0,15-Feb-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com 100 25 20 Is-Reverse Drain Current (A) RDS(on) -Drain to Source resistance (mΩ) YJD45G10AQ VGS=4.5V 15 VGS=10V 10 5 150℃ Tj=25℃ 1 0 0 10 20 30 40 0.4 50 0.5 Figure 7. RDS(on) VS Drain Current BVDSS-MAX Drain to Source Voltage Normalized 1.1 0.6 0.7 0.8 0.9 1 Vsd- Source to Drain Voltage (V) ID-Drain Current (A) Figure 8. Forward characteristics of reverse diode 1.4 ID=250uA ID=250uA VGS(th)-Threshold Voltage Normalized 1.2 1.05 1 0.95 0.9 -75 -25 25 75 125 1 0.8 0.6 0.4 0.2 175 -75 -25 25 75 125 175 Tj-Junction Temperature (℃) Tj-Junction Temperature (℃) Figure 9. Normalized breakdown voltage Figure 10. Normalized Threshold voltage 50 100 40 80 Ptot-Power Dissipation (W) ID-Drain Current (A) 25℃ 10 30 20 10 60 40 20 0 0 -50 0 50 100 -50 150 0 50 100 150 Tc-Case Temperature (℃) Tc-Case Temperature (℃) Figure 11. Current dissipation Figure 12. Power dissipation 5/9 S-B2249 Rev.2.0,15-Feb-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD45G10AQ 1000 1 0.1 ID-Drain-Source Current (A) Zth(J-C)-Thermal Resistance (℃/W) 10 D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 10uS 100 Operation in this area is limited by RDS(ON) 100uS 300uS 10 1mS 10mS DC 1 TJ(max)=150℃ TC=25℃ 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 Single Pulse 0.1 1 0.1 Square Wave Pulse Durtion(S) 1 10 100 1000 VDS-Drain to Source Voltage (V) Figure 13. Maximum Transient Thermal Impedance Figure 14. Safe Operation Area ■ Test Circuits & Waveforms EAS=1/2*L*IAS2 Tp VGS D S L Tp G IAS A D ID VDD DUT 25Ω BVDSS Vds G S Tp VDS Figure A. Unclamped Inductive Switching (UIS) Test Circuit & Waveform 6/9 S-B2249 Rev.2.0,15-Feb-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD45G10AQ D R1 VGS VGS (V) Qg R2 G 10V S C1 VDD D R3 VGS(pl) DUT G IG Qgd Qgs S Charge (C) Figure B. Gate Charge Test Circuit & Waveform VDS 90% L 90% 90% D DUT Rg C1 C2 VDD Vds G S R shunt Vgs VR 10% 10% 10% VGS tD(on) tf tD(off) tr Id=VR/R shunt t(off) t(on) Figure C. Resistive Switching Test Circuit & Waveform D Rg ISD G S D C1 C2 VDD trr DUT G S R shunt VR 25%IRRM Qrr L IRRM Figure D. Diode Recovery Test Circuit & Waveform 7/9 S-B2249 Rev.2.0,15-Feb-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD45G10AQ ■ TO-252 Package information ■ Suggested Pad Layout Dim Millimeters A 11.4 B 6.74 C 6.23 P 4.56 Q1 2.28 Q2 1.52 8/9 S-B2249 Rev.2.0,15-Feb-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD45G10AQ Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with automotive electronics，are not designed for use in medical, life-saving, lifesustaining,or military,Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such im proper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 9/9 S-B2249 Rev.2.0,15-Feb-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com