S9015

Plastic-Encapsulate Transistors FEATURES S9015 (PNP) Complimentary to S9014 MARKING: M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V 1. BASE Emitter-Base Voltage VEBO -5 V 2. EMITTER Collector Current -Continuous IC -0.1 A 3. COLLECTO Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 Storage Temperature Tstg SOT-23 -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC= -100μA, IE=0 -50 V Collector-emitter breakdown voltage VCEO IC = -0.1mA, IB=0 -45 V Emitter-base breakdown voltage VEBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50 V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA hFE DC current gain VCE=-5V, IC= -1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V fT Transition frequency VCE=-5V, IC= -10mA 150 MHz f=30MHz CLASSIFICATION OF hFE Rank L H Range 200-450 450-1000 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors S9015 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2