AO3413A

UMW R UMW AO3413A 20V P-Channel MOSFET Features VDS = -20V IDD = -3A RDS(ON) 66mΩ DS(ON) < 80mΩ RDS(ON) 100m Ω < 80mΩ DS(ON) SOT–23 (VGS = -4.5V) (VGS =- 4.5V)-15 -2.5V) (V(V GS GS==-2.5V) 1. GATE 2. SOURCE 3. DRAIN D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current A TA=70°C Pulsed Drain Current B Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Steady-State Maximum Junction-to-Lead C www.umw-ic.com Units V ±8 V -3 ID A -2.4 IDM TA=25°C A Maximum -20 -15 1.4 PD W 0.9 -55 to 150 TJ, TSTG Symbol RθJA RθJL 1 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W 友台半导体有限公司 UMW R UMW AO3413A 20V P-Channel MOSFET Electrical Characteristics (TJ =25°C unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID=-250µA, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.4 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 RDS(ON) Static Drain-Source On-Resistance gFS VSD IS Maximum Body-Diode Continuous Current Min -20 VDS=-20V, VGS=0V TJ=55°C Units V -1 µA -5 ±100 V VGS=-4.5V, ID=-3A 66 80 Forward Transconductance VGS=-2.5V, ID=-2.6A VDS=-5V, ID=-3A mΩ S Diode Forward Voltage IS=-1A,VGS=0V -1 V -1.4 A 745 pF Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 12 -0.7 560 VGS=0V, VDS=-10V, f=1MHz 80 pF 70 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Gate Source Charge -0.65 nA A mΩ Crss Qgs Max -1 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Typ VGS=-4.5V, VDS=-10V, ID=-3A pF 15 23 8.5 11 Ω nC 1.2 nC Qgd Gate Drain Charge 2.1 nC tD(on) Turn-On DelayTime 7.2 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-3A, dI/dt=100A/µs 37 Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs 27 Body Diode Reverse Recovery Time VGS=-4.5V, VDS=-10V, RL=3.3Ω, RGEN=6Ω 36 ns 53 ns 56 ns 49 ns nC A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA 12 curve provides a single pulse rating. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW AO3413A 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 VDS=-5V -3.0V -4.5V 20 -2.5V 15 -ID(A) -ID (A) 15 -2.0V 10 -15 10 125°C 5 VGS=-1.5V 5 25°C 0 0 0 1 2 3 4 5 0 -VDS (Volts) Figure 1: On-Region Characteristics 150 Normalized On-Resistance RDS(ON) (mΩ Ω) 1 1.5 2 2.5 -VGS(Volts) Figure 2: Transfer Characteristics 3 1.6 130 VGS=-1.8V 110 90 VGS=-2.5V 70 VGS=-4.5V 50 VGS=-2.5V ID=-2.6A 1.4 VGS=-4.5V ID=-3A 1.2 VGS=-1.8V ID=-1A 1 0.8 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 180 ID=-3A 160 1E+01 12 140 1E+00 120 -IS (A) RDS(ON) (mΩ Ω) 0.5 125°C 100 125°C 1E-01 1E-02 25°C 80 1E-03 60 25°C 1E-04 40 0 2 4 6 1E-05 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage www.umw-ic.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 3 友台半导体有限公司 R UMW UMW AO3413A 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1400 VDS=-10V ID=-3A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 800 Ciss 600 -15 400 1 Coss 200 0 Crss 0 0 2 4 6 8 10 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100.00 15 20 1000 RDS(ON) limited TJ(Max)=150°C TA=25°C 10µs 100 100µs Power (W) -ID (Amps) 10.00 10 -VDS (Volts) Figure 8: Capacitance Characteristics 1ms 1.00 10ms 0.1s TJ(Max)=150°C TA=25°C 0.10 10 1 1s DC 0.1 0.01 0.1 1 10 0.00001 100 -VDS (Volts) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 12 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) www.umw-ic.com 4 友台半导体有限公司 UMW R UMW AO3413A 20V P-Channel MOSFET G ate C harge Test C ircuit & W aveform V gs Vgs Qg -10V - - V DC Qgd + + DUT Qgs V ds Vds VD C V gs Vgs Ig C harge Resistive Switching Test Circuit & W aveform s RL Vds t off t on td(on d(on)) Vgs - D UT Vgs tf t dd(off) (o ff) tr 90% Vdd VDC + Rg Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig www.umw-ic.com -Isd L + Vdd -I F t rr dI/dt -I RM Vdd VDC - -Vds 5 友台半导体有限公司 UMW R UMW AO3413A 20V P-Channel MOSFET Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° ADRV 1K Marking U Ordering information Order code Package Baseqty Deliverymode UMW AO3413A SOT-23 3000 Tape and reel www.umw-ic.com 6 友台半导体有限公司