FDA28N50F

FDA28N50F N-Channel MOSFET November 2008 UniFETTM FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A • Low Gate Charge ( Typ. 80nC) • Low Crss ( Typ. 38pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Description These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor correction. D G TO-3PN GDS S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Ratings 500 ±30 28 17 112 2352 28 31 15 310 2.5 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient Ratings 0.4 0.24 40 o Units C/W ©2008 Fairchild Semiconductor Corporation FDA28N50F Rev. A 1 www.fairchildsemi.com FDA28N50F N-Channel MOSFET Package Marking and Ordering Information Device Marking FDA28N50F Device FDA28N50F Package TO-3PN Reel Size Tape Width Quantity 30 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25oC VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V 500 0.7 1 10 ±100 V V/oC µA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 14A VDS = 20V, ID = 14A (Note 4) 3.0 - 0.140 35 5.0 0.175 - V Ω S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 400V, ID = 28A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 3975 566 38 80 22 31 5387 753 56 105 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 28A R G = 25 Ω (Note 4, 5) - 67 137 192 101 145 285 395 212 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 28A VGS = 0V, ISD = 28A dIF/dt = 100A/µs (Note 4) - 266 1.38 28 112 1.5 - A A V ns µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6mH, IAS = 28A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 28A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDA28N50F Rev. A 2 www.fairchildsemi.com FDA28N50F N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 100 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 150 100 ID,Drain Current[A] 10 ID,Drain Current[A] 150 C o -55 C o 10 25 C o 1 *Notes: 1. 250µs Pulse Test 2. TC = 25 C o *Notes: 1. VDS = 20V 2. 250µs Pulse Test 0.3 0.06 0.1 1 10 20 1 VDS,Drain-Source Voltage[V] 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.30 150 100 IS, Reverse Drain Current [A] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature RDS(ON) [Ω], Drain-Source On-Resistance 0.25 150 C o 0.20 VGS = 10V 10 25 C o 0.15 VGS = 20V 0.10 0 *Note: TJ = 25 C o *Notes: 1. VGS = 0V 2. 250µs Pulse Test 25 50 75 ID, Drain Current [A] 100 1 0.2 0.6 1.0 VSD, Body Diode Forward Voltage [V] 1.4 Figure 5. Capacitance Characteristics 8000 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 100V VDS = 250V VDS = 400V Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 8 6000 Capacitances [pF] Ciss *Note: 1. VGS = 0V 2. f = 1MHz 6 4000 Coss 4 2000 Crss 2 *Note: ID = 28A 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] 30 0 20 40 60 80 Qg, Total Gate Charge [nC] 100 FDA28N50F Rev. A 3 www.fairchildsemi.com FDA28N50F N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -75 *Notes: 1. VGS = 10V 2. ID = 14A Figure 8. On-Resistance Variation vs. Temperature BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 175 -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 9. Maximum Safe Operating Area 300 60µs Figure 10. Maximum Drain Current vs. Case Temperature 28 100 ID, Drain Current [A] 1ms 100µs 24 10 10ms DC ID, Drain Current [A] o o 20 16 12 8 4 0 25 1 is Limited by R DS(on) Operation in This Area *Notes: 0.1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 1 Thermal Response [ZθJC] 0.5 0.1 0.2 0.1 0.05 PDM t1 t2 0.01 0.02 0.01 *Notes: 1. ZθJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) o 1E-3 -5 10 Single pulse 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 1 10 FDA28N50F Rev. A 4 www.fairchildsemi.com FDA28N50F N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA28N50F Rev. A 5 www.fairchildsemi.com FDA28N50F N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDA28N50F Rev. A 6 www.fairchildsemi.com FDA28N50F N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FDA28N50F Rev. A 7 www.fairchildsemi.com FDA28N50F N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production 8 FDA28N50F Rev. A www.fairchildsemi.com