FDA28N50F

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDA28N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 28 A, 175 mΩ Features Description • RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 80 nC) • Low Crss (Typ. 38 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply D G G D S TO-3PN S MOSFET Maximum Ratings TC = 25 Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage o C unless otherwise noted. Parameter - Continuous (TC = 25oC) FDA28N50F 500 Unit V ±30 V 28 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 28 A EAR Repetitive Avalanche Energy (Note 1) 31 mJ dv/dt Peak Diode Recovery dv/dt 20 V/ns - Continuous (TC = 100oC) - Pulsed (Note 1) 112 A (Note 2) 2352 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL A 17 - Derate Above 25oC 310 W 2.5 W/oC -55 to +150 oC 300 oC FDA28N50F Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 0.4 RθJA Thermal Resistance, Junction to Ambient, Max. 40 ©2012 Fairchild Semiconductor Corporation FDA28N50F Rev. C2 1 o C/W www.fairchildsemi.com FDA28N50F — N-Channel UniFETTM FRFET® MOSFET May 2014 Part Number Top Mark FDA28N50F FDA28N50F Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 500 - - V - 0.7 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TJ = 25oC ID = 250 μA, Referenced to 25oC VDS = 500 V, VGS = 0 V - - 1 VDS = 400 V, TC = 125oC - - 10 VGS = ±30 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 14 A - 0.140 0.175 Ω gFS Forward Transconductance VDS = 20 V, ID = 14 A - 35 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 3975 5387 pF - 566 753 pF - 38 56 pF - 80 105 nC - 22 - nC - 31 - nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 400 V, ID = 28 A, VGS = 10 V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250 V, ID = 28 A, VGS = 10 V, RG = 25 Ω (Note 4) - 67 145 ns - 137 285 ns - 192 395 ns - 101 212 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 28 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 112 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 28 A - - 1.5 V trr Reverse Recovery Time - 266 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 28 A, dIF/dt = 100 A/μs - 1.38 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 6 mH, IAS = 28 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 28 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2012 Fairchild Semiconductor Corporation FDA28N50F Rev. C2 2 www.fairchildsemi.com FDA28N50F — N-Channel UniFETTM FRFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 150 100 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 100 1 o 150 C o -55 C 10 o 25 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.3 0.06 0.1 1 VDS,Drain-Source Voltage[V] 1 10 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 VGS,Gate-Source Voltage[V] IS, Reverse Drain Current [A] 150 100 0.25 0.20 VGS = 10V VGS = 20V 0.15 o 150 C o 10 25 C *Notes: 1. VGS = 0V o 0.10 *Note: TJ = 25 C 0 25 50 75 ID, Drain Current [A] 1 0.2 100 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.6 1.0 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6000 Ciss 4000 VGS, Gate-Source Voltage [V] 8000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.30 RDS(ON) [Ω], Drain-Source On-Resistance 4 *Note: 1. VGS = 0V 2. f = 1MHz Coss 2000 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 1 10 VDS, Drain-Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FDA28N50F Rev. C2 0 30 3 *Note: ID = 28A 0 20 40 60 80 Qg, Total Gate Charge [nC] 100 www.fairchildsemi.com FDA28N50F — N-Channel UniFETTM FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -75 175 Figure 9. Maximum Safe Operating Area -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 10. Maximum Drain Current vs. Case Temperature 28 300 60μs 100 24 100μs 1ms ID, Drain Current [A] ID, Drain Current [A] *Notes: 1. VGS = 10V 2. ID = 14A 0.5 10ms 10 DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 16 12 8 o 1. TC = 25 C 4 o 0.01 20 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve ZθJC(t), Thermal Response [oC/W] Thermal Response [ZθJC] 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 0.01 0.02 o 0.01 1. ZθJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 1E-3 -5 10 t2 *Notes: -4 10 -3 -2 -1 10 10 10 [sec] tRectangular , RectangularPulse Pulse Duration Duration [sec] 1 10 1 ©2012 Fairchild Semiconductor Corporation FDA28N50F Rev. C2 4 www.fairchildsemi.com FDA28N50F — N-Channel UniFETTM FRFET® MOSFET Typical Performance Characteristics (Continued) FDA28N50F — N-Channel UniFETTM FRFET® MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FDA28N50F Rev. C2 5 www.fairchildsemi.com FDA28N50F — N-Channel UniFETTM FRFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FDA28N50F Rev. C2 6 www.fairchildsemi.com FDA28N50F — N-Channel UniFETTM FRFET® MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003 ©2012 Fairchild Semiconductor Corporation FDA28N50F Rev. C2 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 ©2012 Fairchild Semiconductor Corporation FDA28N50F Rev. C2 8 www.fairchildsemi.com FDA28N50F — N-Channel UniFETTM FRFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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