FDA50N50

FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features • 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V • Low gate charge ( typical 105 nC) • Low Crss ( typical 45 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET October 2008 TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G GD S TO-247 FDH Series TO-3P G DS FDA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDH50N50_F133/FDA50N50 500 48 30.8 192 ±20 1868 48 62.5 4.5 625 5 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min. -0.24 -- Max. 0.2 -40 Unit °C/W °C/W °C/W ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDH50N50_F133 / FDA50N50 Rev. A FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDH50N50_F133 FDA50N50 Device FDH50N50_F133 FDA50N50 Package TO-247 TO-3P TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 30 30 Electrical Characteristics Symbol Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250μA ID = 250μA, Referenced to 25°C VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 24A VDS = 40V, ID = 48A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 500 -----3.0 ----------(Note 4, 5) Typ. -0.5 -----0.089 20 4979 760 50 161 342 105 360 225 230 105 33 45 Max Units --25 250 100 -100 5.0 0.105 -6460 1000 65 --220 730 460 470 137 --V V/°C μA μA nA nA V Ω S pF pF pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics VDS = 400V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 250V, ID = 48A RG = 25Ω Switching Characteristics ----- VDS = 400V, ID = 48A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 48A VGS = 0V, IS = 48A dIF/dt =100A/μs (Note 4) ------ ---580 10 48 192 1.4 --- A A V ns μC 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.46mH, IAS = 48A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 48A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDH50N50_F133 / FDA50N50 Rev. A 2 www.fairchildsemi.com FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 2 Figure 2. Transfer Characteristics 100 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] ID , Drain Current [A] 10 1 10 150 C 25 C -55 C Notes : 1. VDS = 40V 2. 250μs Pulse Test o o o 10 0 1 Notes : 1. 250μs Pulse Test o 2. TC = 25 C 10 -1 10 -1 10 0 10 1 0.1 4 5 6 7 8 9 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.4 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 160 IDR , Reverse Drain Current [A] Drain-Source On-Resistance 0.3 120 RDS(ON) [Ω], VGS = 10V 0.2 80 0.1 VGS = 20V 150 C 40 25 C Notes : 1. VGS = 0V 2. 250μs Pulse Test o o Note : TJ = 25 C o 0.0 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics 12,000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VDS = 100V VGS, Gate-Source Voltage [V] 10,000 10 VDS = 250V VDS = 400V Capacitance [pF] 8,000 8 6,000 Ciss Coss 6 4,000 Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2,000 2 Note : ID = 48A Crss 0 -1 10 10 0 10 1 10 2 0 0 20 40 60 80 100 120 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDH50N50_F133 / FDA50N50 Rev. A 3 www.fairchildsemi.com FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 2.5 BVDSS, (Normalized) Drain-Source Breakdown Voltage Drain-Source On-Resistance 2.0 RDS(ON), (Normalized) 1.1 1.5 1.0 1.0 0.9 Notes : 1. VGS = 0 V 2. ID = 250 μA 0.5 Notes : 1. VGS = 10 V 2. ID = 24 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area 10 3 Figure 10. Maximum Drain Current vs. Case Temperature 50 Operation in This Area is Limited by R DS(on) 40 ID, Drain Current [A] 1 ms 10 1 ID, Drain Current [A] 3 10 2 10 us 100 us 10 ms 30 DC 20 10 0 Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 10 -1 10 0 10 1 10 2 10 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Typical Drain Current Slope vs. Gate Resistance 4,000 3,500 3,000 2,500 Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C o Figure 12. Typical Drain-Source Voltage Slope vs. Gate Resistance 45 40 35 30 Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C o di/dt [A/μS] dv/dt [V/nS] di/dt(on) 2,000 1,500 1,000 500 0 25 20 15 10 5 0 dv/dt(on) dv/dt(off) di/dt(off) 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50 RG, Gate resistance [Ω] RG, Gate resistance [Ω] FDH50N50_F133 / FDA50N50 Rev. A 4 www.fairchildsemi.com FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 13. Typical Switching Losses vs. Gate Resistance 1,000 Figure 14. Unclamped Inductive Switching Capability 100 Notes : 1. If R = 0 Ω tAV = (L)(IAS)/(1.3 Rated BVDSS - VDD) 2. If R ≠ 0 Ω tAV = (L/R)In[(IAS x R)/(1.3 Rated BVDSS - VDD)+1] 800 600 IAS, Avalanche Current [A] Eoff Energy [μJ] Eon 400 Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C o 10 Starting TJ = 150 C o Starting TJ = 25 C o 200 0 0 5 10 15 20 25 30 35 40 45 50 1 0.01 0.1 1 10 100 RG, Gate resistance [Ω] tAV, Time In Avalanche [ms] Figure 15. Transient Thermal Resistance Curve 10 -1 D=0.5 0.2 0.1 0.05 N otes : o 1. Z θ JC(t) = 0.2 C/W Max. 2. Duty Factor, D=t1/t2 3 . T JM - T C = P DM * Z θ JC(t) ZθJC(t), Thermal Response 10 -2 0.02 0.01 single pulse 10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1, Square W ave Pulse Duration [sec] FDH50N50_F133 / FDA50N50 Rev. A 5 www.fairchildsemi.com FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Mechanical Dimensions TO-247AB Dimensions in Millimeters FDH50N50_F133 / FDA50N50 Rev. A 6 www.fairchildsemi.com FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters FDH50N50_F133 / FDA50N50 Rev. A 7 www.fairchildsemi.com FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 8 FDH50N50_F133 / FDA50N50 Rev. A www.fairchildsemi.com