FDA50N50

TM FDH50N50 / FDA50N50 500V N-Channel MOSFET Features Description • 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 105 nC) • Low Crss ( typical 45 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability D ! " G! G D S TO-247 FDH Series G DS ! " " " TO-3P ! FDA Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR FDH50N50/FDA50N50 Unit 500 V 48 30.8 A A 192 A ±20 V Single Pulsed Avalanche Energy (Note 2) 1868 mJ Avalanche Current (Note 1) 48 A EAR Repetitive Avalanche Energy (Note 1) 62.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 625 5 W W/°C -55 to +150 °C 300 °C (Note 1) (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2004 Fairchild Semiconductor Corporation FDH50N50 / FDA50N50 Rev. A 1 Min. Max. Unit -- 0.2 °C/W 0.24 -- °C/W -- 40 °C/W www.fairchildsemi.com FDH50N50 / FDA50N50 500V N-Channel MOSFET UniFET Device Marking Device Package Reel Size Tape Width Quantity FDH50N50 FDH50N50 TO-247 - - 30 FDA50N50 FDA50N50 TO-3P - - 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C --- --- 25 250 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 20V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.089 0.105 Ω -- 20 -- S -- 4979 6460 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 24A gFS Forward Transconductance VDS = 40V, ID = 48A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 760 1000 pF -- 50 65 pF Coss Output Capacitance VDS = 400V, VGS = 0V, f = 1.0MHz -- 161 -- pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 342 -- pF VDD = 250V, ID = 48A RG = 25Ω -- 105 220 ns -- 360 730 ns -- 225 460 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 400V, ID = 48A VGS = 10V (Note 4, 5) -- 230 470 ns -- 105 137 nC -- 33 -- nC -- 45 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 48 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 192 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 48A -- -- 1.4 V trr Reverse Recovery Time -- 580 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 48A dIF/dt =100A/µs -- 10 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.46mH, IAS = 48A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 48A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FDH50N50 / FDA50N50 Rev. A www.fairchildsemi.com FDH50N50 / FDA50N50 500V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS 2 10 100 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 ID , Drain Current [A] ID, Drain Current [A] Figure 2. Transfer Characteristics 0 10 10 o 150 C! o 25 C! o -55 C! 1 Notes : 1. VDS = 40V Notes : 1. 250µs Pulse Test o 2. TC = 25 C! 2. 250µs Pulse Test -1 10 -1 0 10 0.1 1 10 10 4 5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 8 9 0.3 VGS = 10V 0.2 VGS = 20V 0.1 120 80 o 150 C o 40 25 C Notes : 1. VGS = 0V 2. 250µs Pulse Test o Note : TJ = 25 C 0.0 0 25 50 75 100 125 150 0 0.2 175 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12,000 12 Ciss = Cgs + Cgd (Cds = shorted) VDS = 100V Coss = Cds + Cgd VGS, Gate-Source Voltage [V] Crss = Cgd 10,000 Capacitance [pF] 10 160 IDR , Reverse Drain Current [A] RDS(ON) [Ω], 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.4 Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 8,000 6,000 Ciss 4,000 Coss Notes : 1. VGS = 0 V 2. f = 1 MHz 2,000 Crss 0 -1 10 0 10 VDS = 400V 8 6 4 2 Note : ID = 48A 1 10 0 2 0 10 20 40 60 80 100 120 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 FDH50N50 / FDA50N50 Rev. A VDS = 250V 10 www.fairchildsemi.com FDH50N50 / FDA50N50 500V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(ON), (Normalized) 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250 µA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 24 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 3 50 10 Operation in This Area is Limited by R DS(on) 40 10 us 100 us ID, Drain Current [A] ID, Drain Current [A] 2 10 1 ms 10 ms DC 1 10 Notes : o 1. TC = 25 C 0 10 30 20 10 o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 10 1 2 0 25 3 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Typical Drain Current Slope vs. Gate Resistance Figure 12. Typical Drain-Source Voltage Slope vs. Gate Resistance 4,000 45 Notes : 1. VDS = 400 V 3,500 Notes : 1. VDS = 400 V 40 2. VGS = 12 V 2. VGS = 12 V 3. ID = 25A 3,000 3. ID = 25A 35 o o 4. TJ = 125 C! 4. TJ = 125 C 2,500 dv/dt [V/nS] di/dt [A/µS] 30 di/dt(on) 2,000 1,500 di/dt(off) 1,000 dv/dt(on) 25 20 15 dv/dt(off) 10 500 5 0 0 0 5 10 15 20 25 30 35 40 45 50 0 RG, Gate resistance [Ω] 10 15 20 25 30 35 40 45 50 RG, Gate resistance [Ω] 4 FDH50N50 / FDA50N50 Rev. A 5 www.fairchildsemi.com FDH50N50 / FDA50N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 13. Typical Switching Losses vs. Gate Resistance Figure 14. Unclamped Inductive Switching Capability 1,000 100 Notes : 1. If R = 0 Ω tAV = (L)(IAS)/(1.3 Rated BVDSS - VDD) 2. If R ≠ 0 Ω tAV = (L/R)In[(IAS x R)/(1.3 Rated BVDSS - VDD)+1] IAS, Avalanche Current [A] 800 Energy [µJ] Eoff 600 Eon 400 Notes : 1. VDS = 400 V 200 2. VGS = 12 V o o Starting TJ = 150 C 10 Starting TJ = 25 C 3. ID = 25A o 4. TJ = 125 C! 0 0 5 10 15 20 25 30 35 40 45 1 0.01 50 0.1 RG, Gate resistance [Ω] 1 10 100 tAV, Time In Avalanche [ms] Figure 15. Transient Thermal Resistance Curve ZθJC(t), Thermal Response 10 -1 D=0.5 0.2 10 0.1 Notes : o 1. Z θ JC(t) = 0.2 C/W Max. 0.05 3. T JM - T C = P DM * Z θ JC(t) 2. Duty Factor, D=t1 /t2 -2 0.02 0.01 single pulse 10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1, Square W ave Pulse Duration [sec] 5 FDH50N50 / FDA50N50 Rev. A www.fairchildsemi.com FDH50N50 / FDA50N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) FDH50N50 / FDA50N50 500V N-Channel MOSFET Mechanical Dimensions TO-247AD (FKS PKG CODE 001) Dimensions in Millimeters 6 FDH50N50 / FDA50N50 Rev. A www.fairchildsemi.com FDH50N50 / FDA50N50 500V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters 7 FDH50N50 / FDA50N50 Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I14 8 FDH50N50 / FDA50N50 Rev. A www.fairchildsemi.com FDH50N50 / FDA50N50 500V N-Channel MOSFET TRADEMARKS