FDA18N50

FDA18N50 500V N-Channel MOSFET October 2006 FDA18N50 500V N-Channel MOSFET Features • 19A, 500V, RDS(on) = 0.265Ω @VGS = 10 V • Low gate charge ( typical 45 nC) • Low Crss ( typical 25 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G TO-3P G DS FDA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDA18N50 500 19 11.4 76 ±30 945 19 23 4.5 239 1.92 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Min. -0.24 -- Max. 0.52 -40 Unit °C/W °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDA18N50 Rev. A FDA18N50 500V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDA18N50 Device FDA18N50 Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Conditions VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 9.5A VDS = 40V, ID = 9.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 500 ------ Typ. -0.5 ----- Max Units --1 10 100 -100 V V/°C µA µA nA nA On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.220 25 5.0 0.265 -V Ω S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---2200 330 25 2860 430 40 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400V, ID = 19A VGS = 10V (Note 4, 5) (Note 4, 5) VDD = 250V, ID = 19A RG = 25Ω -------- 55 165 95 90 45 12.5 19 120 340 200 190 60 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 4.7mH, IAS = 19A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 19A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 19A VGS = 0V, IS = 19A dIF/dt =100A/µs (Note 4) ------ ---500 5.4 19 76 1.4 --- A A V ns µC 2 FDA18N50 Rev. A www.fairchildsemi.com FDA18N50 500V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 10 2 Figure 2. Transfer Characteristics 2 ID, Drain Current [A] 10 1 ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 1 150 C 25 C -55 C * Notes : 1. VDS = 40V 2. 250µs Pulse Test o o o 10 0 * Notes : 1. 250µs Pulse Test 10 -1 2. TC = 25 C o 10 -1 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue RDS(ON) [Ω], Drain-Source On-Resistance 0.6 10 2 0.5 VGS = 10V 0.4 IDR, Reverse Drain Current [A] 10 1 0.3 VGS = 20V 0.2 * Note : TJ = 25 C o 150oC 25 C o * Notes : 1. VGS = 0V 2. 250µs Pulse Test 0.1 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 5000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 Coss VGS, Gate-Source Voltage [V] 4000 10 VDS = 100V VDS = 250V VDS = 400V Capacitances [pF] 8 3000 Ciss 6 2000 * Note : 1. VGS = 0 V 2. f = 1 MHz 4 1000 Crss 2 * Note : ID = 18A 0 -1 10 10 0 10 1 0 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FDA18N50 Rev. A www.fairchildsemi.com FDA18N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250µA 0.5 * Notes : 1. VGS = 10 V 2. ID = 9.5 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 20 10 2 10 µs 100 µs ID, Drain Current [A] 15 10 1 10 0 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 1 ms 10 ms 100 ms DC 10 10 -1 * Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 5 10 -2 10 0 10 1 10 2 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 0 10 ZθJC(t), Thermal Response D = 0 .5 0 .2 10 -1 PDM 0 .1 0 .0 5 0 .0 2 0 .0 1 * N o te s : 1 . Z θ J C ( t) = 0 .5 2 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) o t1 t2 10 -2 s in g le p u ls e -5 -4 -3 -2 10 10 10 10 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] 4 FDA18N50 Rev. A www.fairchildsemi.com FDA18N50 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FDA18N50 Rev. A www.fairchildsemi.com FDA18N50 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FDA18N50 Rev. A www.fairchildsemi.com FDA18N50 500V N-Channel MOSFET Mechanical Dimensions 7 FDA18N50 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I21