NTMFS4C029NT1G

NTMFS4C029N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 46 A Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 5.88 mW @ 10 V 30 V 46 A 9.0 mW @ 4.5 V Applications • CPU Power Delivery • DC−DC Converters D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Symbol Value Unit VDSS 30 V VGS ±20 V ID 15.0 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.49 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 22.5 A Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) TA = 80°C N−CHANNEL MOSFET TA = 25°C PD 5.6 W TA = 25°C ID 8.2 A TA = 80°C 6.2 TA = 25°C PD 0.75 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 46 A Power Dissipation RqJC (Note 1) TC = 25°C PD 23.6 W TA = 25°C, tp = 10 ms IDM 132 A IDmax 80 A TJ, TSTG −55 to +150 °C IS 21 A Drain to Source dV/dt dV/dt 7.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL = 25 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) EAS 31 mJ TL 260 °C TC =80°C Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) MARKING DIAGRAMS D 16.8 Power Dissipation RqJA (Note 2) Pulsed Drain Current S (1,2,3) 11.2 TA = 80°C Steady State G (4) S SO−8 FLAT LEAD S CASE 488AA S STYLE 1 G 1 D 4C029 AYWZZ D D A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceabililty 34 ORDERING INFORMATION Package Shipping† NTMFS4C029NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4C029NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. © Semiconductor Components Industries, LLC, 2016 May, 2019− Rev. 1 1 Publication Order Number: NTMFS4C029N/D NTMFS4C029N 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 17 Apk, EAS = 14 mJ. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Junction−to−Case (Drain) RqJC 5.3 Junction−to−Ambient – Steady State (Note 4) RqJA 50.3 Junction−to−Ambient – Steady State (Note 5) RqJA 165.9 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 22.2 Unit °C/W 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 7.1 A, Tcase = 25°C, ttransient = 100 ns 34 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V V 14.5 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance 1.3 VGS(TH)/TJ RDS(on) 4.7 mV/°C VGS = 10 V ID = 30 A 4.9 5.88 VGS = 4.5 V ID = 15 A 7.41 9.0 Forward Transconductance gFS VDS = 1.5 V, ID = 15 A Gate Resistance RG TA = 25°C 43 0.3 1.0 mW S 2.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 987 VGS = 0 V, f = 1 MHz, VDS = 15 V 574 VGS = 0 V, VDS = 15 V, f = 1 MHz 0.165 CRSS 162 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 9.7 Threshold Gate Charge QG(TH) 1.5 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate Plateau Voltage Total Gate Charge pF VGS = 4.5 V, VDS = 15 V; ID = 30 A 2.8 nC 4.8 VGP QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 3.2 V 18.6 nC SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 9.0 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 34 14 7.0 www.onsemi.com 2 ns NTMFS4C029N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 7.0 VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 26 ns 18 4.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.80 TJ = 125°C 0.67 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 26.7 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 14.1 ns 12.6 13.7 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTMFS4C029N TYPICAL CHARACTERISTICS 4.0 V 4.2 V to 10 V 80 3.8 V TJ = 25°C ID, DRAIN CURRENT (A) 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 1 2 4 3 40 30 TJ = 125°C 20 TJ = 25°C TJ = −55°C 0 2.0 2.5 3.0 3.5 4.0 Figure 2. Transfer Characteristics ID = 30 A 0.012 0.010 0.008 0.006 0.004 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 4.5 5.0 0.020 0.018 TJ = 25°C 0.016 0.014 0.012 VGS = 4.5 V 0.010 0.008 VGS = 10 V 0.006 0.004 0.002 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.7 10000 VGS = 0 V ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.5 Figure 1. On−Region Characteristics 0.014 1.5 1.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.016 1.6 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.018 3.0 50 0 5 0.020 0.002 60 10 2.6 V 0 VDS = 5 V 70 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 65 60 55 50 45 40 35 30 25 20 15 10 5 0 1.4 1.3 1.2 1.1 1.0 1000 TJ = 150°C TJ = 125°C 100 TJ = 85°C 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 150 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NTMFS4C029N TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C Ciss 1000 VGS, GATE−TO−SOURCE VOLTAGE (V) 1200 800 Coss 600 400 Crss 200 0 0 5 10 15 20 25 30 QT 9 8 7 6 5 Qgs 4 Qgd 3 TJ = 25°C VDD = 15 V VGS = 10 V ID = 30 A 2 1 0 0 2 4 6 8 10 20 IS, SOURCE CURRENT (A) 18 td(on) tr td(off) tf 1 10 16 14 12 10 8 6 4 0 0.4 100 20 VGS = 0 V TJ = 125°C 2 TJ = 25°C 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 10 1 ms 10 ms 1 0 V < VGS < 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) RG, GATE RESISTANCE (W) 100 ID, DRAIN CURRENT (A) 18 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 0.01 16 Figure 7. Capacitance Variation 100 0.1 14 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V 1 12 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 t, TIME (ns) 10 100 14 ID = 17 A 12 10 8 6 4 2 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 5 150 NTMFS4C029N TYPICAL CHARACTERISTICS 100 Duty Cycle = 50% R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response 60 100 ID, DRAIN CURRENT (A) 50 GFS (S) 40 30 20 10 0 0 10 20 30 40 50 60 70 TA = 25°C 1 1.E−08 80 TA = 85°C 10 1.E−07 1.E−06 1.E−05 1.E−04 1.E−03 ID (A) PULSE WIDTH (SECONDS) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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