IXFH50N85X

IXFT50N85XHV IXFH50N85X IXFK50N85X X-Class HiPerFETTM Power MOSFET VDSS ID25 = 850V = 50A  105m  RDS(on) TO-268HV (IXFT) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 50 A IDM TC = 25C, Pulse Width Limited by TJM 125 A IA TC = 25C 25 A EAS TC = 25C 2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 890 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 4 6 10 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247 & TO-264) Weight TO-268HV TO-247 TO-264 TO-247 (IXFH) G BVDSS VGS = 0V, ID = 1mA 850 VGS(th) VDS = VGS, ID = 4mA 3.5 D S G = Gate S = Source IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on)      V 100 nA VGS = 10V, ID = 0.5 • ID25, Note 1 International Standard Packages High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance High Power Density Easy to Mount Space Savings Applications 50 A 3 mA  105 m     © 2016 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Features  TJ = 125C D (Tab) Advantages V 5.5 D (Tab) G  Characteristic Values Min. Typ. Max. S TO-264 (IXFK)  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100704D(12/16) IXFT50N85XHV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 19 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 32 S 0.6  4480 pF 4863 pF 116 pF 180 750 pF pF 27 ns 30 ns 69 ns 14 ns 152 nC 28 nC 88 nC Crss IXFH50N85X IXFK50N85X Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.14 C/W RthJC RthCS TO-247 TO-264P C/W C/W 0.21 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 50 A Repetitive, pulse Width Limited by TJM 200 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 25A, -di/dt = 100A/μs 218 1.85 17.0 ns μC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT50N85XHV IXFH50N85X IXFK50N85X Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 120 50 VGS = 10V VGS = 10V 45 8V 100 40 80 7V I D - Amperes I D - Amperes 35 9V 30 25 20 8V 60 7V 40 15 6V 10 20 6V 5 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5.5 5 10 15 VDS - Volts 3.8 50 VGS = 10V 8V 30 VGS = 10V 3.4 40 7V R DS(on) - Normalized 3.0 35 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 45 20 VDS - Volts 30 6V 25 20 15 2.6 I D = 50A 2.2 I D = 25A 1.8 1.4 1.0 10 5V 0.6 5 4V 0.2 0 0 2 4 6 8 10 -50 12 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4.0 150 1.3 VGS = 10V 1.2 BVDSS / VGS(th) - Normalized 3.5 TJ = 125ºC RDS(on) - Normalized -25 VDS - Volts 3.0 2.5 2.0 TJ = 25ºC 1.5 1.0 1.1 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 20 40 60 80 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 100 120 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT50N85XHV Fig. 7. Maximum Drain Current vs. Case Temperature IXFH50N85X IXFK50N85X Fig. 8. Input Admittance 60 80 70 50 60 I D - Amperes I D - Amperes 40 30 TJ = 125ºC 25ºC - 40ºC 50 40 30 20 20 10 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 8.0 8.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 60 160 TJ = - 40ºC 140 50 I S - Amperes g f s - Siemens 120 25ºC 40 125ºC 30 100 80 60 20 TJ = 125ºC 40 TJ = 25ºC 10 20 0 0 0 10 20 30 40 50 60 70 80 0.3 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts Fig. 11. Gate Charge Fig. 12. Capacitance 10 100,000 VDS = 425V VGS - Volts Capacitance - PicoFarads I D = 25A 8 I G = 10mA 6 4 2 10,000 Ciss 1,000 Coss 100 10 Crss f = 1 MHz 0 1 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFT50N85XHV Fig. 13. Output Capacitance Stored Energy IXFH50N85X IXFK50N85X Fig. 14. Forward-Bias Safe Operating Area 1000 60 RDS(on) Limit 50 25µs 40 I D - Amperes E OSS - MicroJoules 100 30 100µs 10 20 1 10 1ms TJ = 150ºC TC = 25ºC Single Pulse 10ms DC 0.1 0 0 100 200 300 400 500 Fig. Impedance 10 60015. Maximum 700 800Transient Thermal VDS - Volts 1 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved 0.1 1 10 IXFT50N85XHV IXFH50N85X IXFK50N85X TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-247 Outline D A A2 A2 Q + R S TO-264 Outline A 0P O + 0K M D B M B E D2 Q S + D1 D 0P1 1 2 3 A E 4 R D Q1 R1 ixys option 1 L1 2 3 L1 C E1 L L c A1 c b b2 b4 e + J M C AM O b1 x2 e PINS: 1 - Gate 2, 4 - Drain 3 - Source Terminals: 1 = Gate 2,4 = Drain 3 = Source b2 b A1 4 0P BACK SIDE IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_50N85X(S8) 2-03-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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