IXFH30N50Q3

IXFT30N50Q3 IXFH30N50Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) = 500V = 30A  200m D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS VGSM Continuous Transient  20  30 V V ID25 TC = 25C 30 A IDM TC = 25C, Pulse Width Limited by TJM 90 A IA TC = 25C 30 A EAS TC = 25C 1.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 690 W -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TO-247 (IXFH) G Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 300 260 °C °C 1.13 / 10 Nm/lb.in. 4 6 g g S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  TL TSOLD D     Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) T J = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2019 IXYS CORPORATION, All Rights Reserved  V 6.5 V           100 nA 10 A 500  µA 200 m High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100338A(12/19) IXFT30N50Q3 IXFH30N50Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 12 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss 20 S 3200 pF 435 pF 43 pF VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr Gate Input Resistance 0.17 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 tf RG = 2 (External) Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd ns 14 ns 26 ns 9 ns 62 nC 21 nC 26 nC 0.18 C/W RthJC RthCS  14 Resistive Switching Times td(off) Qgs  TO-247 C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note Characteristic Values Min. Typ. Max. 30 A Repetitive, Pulse Width Limited by TJM 120 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 15A, -di/dt = 100A/s VR = 100V, VGS = 0V 10.4 A 1.05 µC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT30N50Q3 IXFH30N50Q3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 30 VGS = 10V 9V 25 70 60 20 9V 50 8V I D - Amperes I D - Amperes V GS = 10V 15 40 30 8V 10 7V 20 5 7V 10 6V 6V 0 0 0 1 2 3 4 5 6 0 5 10 15 30 30 3.4 V GS = 10V 8V VGS = 10V 3.0 RDS(on) - Normalized 25 20 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 7V 15 10 6V 2.6 I D = 30A 2.2 I D = 15A 1.8 1.4 1.0 5 0.6 5V 0 0.2 0 3.4 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 35 VGS = 10V 30 3.0 25 2.6 o TJ = 125 C I D - Amperes RDS(on) - Normalized 20 VDS - Volts VDS - Volts 2.2 1.8 20 15 10 1.4 o TJ = 25 C 5 1.0 0 0.6 0 10 20 30 40 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 50 60 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT30N50Q3 IXFH30N50Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 45 45 40 40 35 35 30 30 g f s - Siemens I D - Amperes o 25 20 o TJ = 125 C 15 TJ = - 40 C o 25 C 25 o 125 C 20 15 o 25 C o - 40 C 10 10 5 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 5 10 15 20 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 30 35 40 45 50 Fig. 10. Gate Charge 100 16 VDS = 250V 14 I D = 15A 80 I G = 10mA 12 60 10 VGS - Volts I S - Amperes 25 I D - Amperes 40 8 6 o TJ = 125 C 4 o TJ = 25 C 20 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 VSD - Volts 30 40 50 Fig. 11. Capacitance 10000 70 80 90 Fig. 12. Forward-Bias Safe Operating Area 100 RDS(on) Limit 25µs Ciss 100µs 1000 10 I D - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs Coss 100 1 o TJ = 150 C 1ms o TC = 25 C Single Pulse Crss f = 1 MHz 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFT30N50Q3 IXFH30N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_30N50Q3(Q6)05-17-11 IXFT30N50Q3 IXFH30N50Q3 TO-268 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFT30N50Q3 IXFH30N50Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved