IXFH21N50

HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOLETE: IXFM21N50 IXFM24N50 Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM 21 24 26 84 96 104 21 24 26 A A A A A A A A A 30 mJ 5 V/ns 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TC = 25°C EAR TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 21N50 24N50 26N50 21N50 24N50 26N50 21N50 24N50 26N50 1.13/10 Weight Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Symbol Test Conditions VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V © 1999 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 TJ = 25°C TJ = 125°C RDS(on) 500 V 21 A 0.25 Ω 500 V 24 A 0.23 Ω 500 V 26 A 0.20 Ω trr ≤ 250 ns Symbol IAR ID25 V 4 V ±100 nA 200 1 µA mA TO-247 AD (IXFH) (TAB) TO-268 (D3) Case Style G S (TAB) TO-204 AE (IXFM) OBSOLETE PACKAGE TYPE G D G = Gate, S = Source, D = Drain, TAB = Drain Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) • High power surface mountable package • High power density 91525H (9/99) IXFH21N50 IXFM21N50 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) RDS(on) Characteristic Values Min. Typ. Max. VGS = 10 V, ID = 0.5 ID25 21N50 24N50 26N50 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % gfs VDS = 10 V; ID = 0.5 ID25, pulse test Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 0.25 0.23 0.20 11 td(on) tr td(off) tf VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 Ω (External) Qg(on) Qgs Qgd VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RthJC RthCK S 4200 450 135 pF pF pF 16 33 65 30 25 45 80 40 ns ns ns ns 135 28 62 160 40 85 nC nC nC 0.25 0.42 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 21N50 24N50 26N50 21 24 26 A A A ISM Repetitive; pulse width limited by TJM 21N50 24N50 26N50 84 96 104 A A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 400 ns ns µC µC A A t rr QRM IRM IF = IS -di/dt = 100 A/µs, VR = 100 V TJ = TJ = TJ = TJ = TJ = TJ = 25°C 125°C 25°C 125°C 25°C 125°C 1 2 10 15 Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S) 1 Dim. 2 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 3 Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-204 AE (IXFM) Outline Pins: 1 - Gate, 2 - Source, Case - Drain Dim. Millimeter Min. Max. Inches Min. Max. 6.4 1.53 1.45 11.4 3.42 1.60 .250 .060 .057 .450 .135 .063 e e1 10.67 5.21 11.17 5.71 .420 .205 .440 .225 L 11.18 12.19 .440 .480 3.84 3.84 4.19 4.19 .151 .151 .165 .165 A A1 ∅b ∅D ∅p ∅p1 TO-268 Outline IXFH26N50 IXFM26N50 IXFT26N50 TO-247 AD (IXFH) Outline Ω Ω Ω 21 (TO-247 Case Style) Source-Drain Diode IXFH24N50 IXFM24N50 IXFT24N50 q 22.22 30.15 BSC .875 1.187 BSC R R1 12.58 3.33 13.33 4.77 .495 .131 .525 .188 s 16.64 17.14 .655 .675 Min. Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFH21N50 IXFM21N50 IXFH24N50 IXFM24N50 IXFT24N50 Fig. 1 Output Characteristics 50 50 7V 40 45 6V 35 TJ = 25°C 40 TJ = 25°C ID - Amperes ID - Amperes Fig. 2 Input Admittance VGS = 10V 45 30 25 20 5V 15 VDS = 10V 35 30 25 20 15 10 10 5 5 0 0 0 5 10 15 20 25 30 35 0 1 2 3 VDS - Volts 5 6 7 8 9 10 Fig. 4 Temperature Dependence of Drain to Source Resistance 1.6 2.50 TJ = 25°C 2.25 1.4 1.3 VGS = 10V 1.2 VGS = 15V 1.1 RDS(on) - Normalized 1.5 RDS(on) - Normalized 4 VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.0 2.00 1.75 ID = 12A 1.50 1.25 1.00 0.75 0.9 0 5 0.50 -50 10 15 20 25 30 35 40 45 50 -25 0 ID - Amperes 75 100 125 150 1.2 VGS(th) 26N50 BVDSS 1.1 BV/VG(th) - Normalized 25 24N50 21N50 15 10 5 0 -50 50 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 30 20 25 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature ID - Amperes IXFH26N50 IXFM26N50 IXFT26N50 1.0 0.9 0.8 0.7 0.6 -25 0 25 50 75 TC - Degrees C © 1999 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 TJ - Degrees C 100 125 150 IXFH21N50 IXFM21N50 Fig.7 Gate Charge Characteristic Curve 100 VDS = 250V IG = 10mA 100µs ID - Amperes 7 VGE - Volts 10µs Limited by RDS(on) ID = 12.5A 8 IXFH26N50 IXFM26N50 IXFT26N50 Fig.8 Forward Bias Safe Operating Area 10 9 IXFH24N50 IXFM24N50 IXFT24N50 6 5 4 3 10 1ms 10ms 1 100ms 2 1 0 0.1 0 25 50 75 100 125 150 175 200 1 10 Gate Charge - nCoulombs Fig.9 500 VDS - Volts Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage 50 4500 45 Ciss 4000 40 3500 ID - Amperes Capacitance - pF 100 3000 f = 1 Mhz VDS = 25V 2500 2000 1500 1000 5 10 15 20 25 20 TJ = 125°C 15 TJ = 25°C 5 Crss 0 0 30 10 Coss 500 35 0 0.00 25 0.25 0.50 VDS - Volts 0.75 1.00 1.25 1.50 VSD - Volt Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025