IXFH21N50Q

IXFH 21N50Q IXFT 21N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 21 A ID25 RDS(on) = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 21 A IDM TC = 25°C, pulse width limited by TJM 84 A IAR TC = 25°C 21 A EAR TC = 25°C 30 mJ 1.5 mJ 15 V/ns 280 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 300 °C EAS dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-268 Symbol Test Conditions VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) 1.13/10 Nm/lb.in. 6 4 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved g g V 4.5 V ±100 nA 25 1 µA mA 0.25 Ω TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G (TAB) S G = Gate D = Drain S = Source TAB = Drain Features l IXYS advanced low Qg process l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification l Advantages l Easy to mount l Space savings l High power density 98718B(02/04) IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 14 21 S 3000 pF 420 pF Crss 110 pF td(on) 25 ns 28 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 2.0 Ω (External), 51 ns tf 12 ns Qg(on) 84 nC 20 nC 35 nC Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.45 (TO-247) Source-Drain Diode 0.25 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 21 A ISM Repetitive; pulse width limited by TJM 84 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.3 V 250 ns µC A t rr QRM IRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.85 8 TO-247 AD (IXFH) Outline 1 Dim. 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-268 Outline Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXFH 21N50Q IXFT 21N50Q Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 60 22 VGS = 10V 8V 7V 20 18 VGS = 10V 50 8V 7V 45 16 14 I D - Amperes I D - Amperes 55 6V 12 10 5.5V 8 6 2 6.5V 35 30 6V 25 20 15 5V 4 40 5.5V 10 5V 5 4.5V 0 0 0 1 2 3 4 5 0 6 3 6 9 V D S - Volts Fig. 3. Output Characteristics @ 125ºC 18 21 24 27 30 2.8 VGS = 10V 8V 7V 6V 18 16 VGS = 10V 2.5 14 R D S ( o n ) - Normalized 20 I D - Amperes 15 V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 22 5.5V 12 10 5V 8 6 2.2 1.9 I D = 21A 1.6 I D = 10.5A 1.3 1 4.5V 4 0.7 2 0.4 0 0 2 4 6 8 10 12 -50 14 -25 Fig. 5. RDS(on) Norm alized to 3.1 25 50 75 100 125 150 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 3.4 0 TJ - Degrees Centigrade V D S - Volts 24 21 VGS = 10V TJ = 125ºC 2.8 18 2.5 I D - Amperes R D S ( o n ) - Normalized 12 2.2 1.9 1.6 15 12 9 6 1.3 TJ = 25ºC 3 1 0 0.7 0 5 10 15 20 25 30 35 I D - Amperes © 2004 IXYS All rights reserved 40 45 50 55 60 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 98718B(02/04) IXFH 21N50Q IXFT 21N50Q Fig. 8. Transconductance Fig. 7. Input Adm ittance 35 40 30 35 g f s - Siemens 25 I D - Amperes TJ = -40ºC 25ºC 125ºC 30 20 15 TJ = 125ºC 25ºC -40ºC 10 25 20 15 10 5 5 0 0 3.5 4 4.5 5 5.5 6 6.5 0 5 10 15 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 25 30 35 40 Fig. 10. Gate Charge 10 60 50 9 VDS = 250V 8 I D = 10.5A I G = 10mA 7 40 VG S - Volts I S - Amperes 20 I D - Amperes 30 TJ = 125ºC 20 6 5 4 3 TJ = 25ºC 10 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 V S D - Volts 1 1.1 0 10 20 30 40 50 60 70 80 90 Q G - nanoCoulombs Fig. 12. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 10000 1.00 C iss R( t h ) J C - ºC / W Capacitance - picoFarads f = 1MHz 1000 C oss 100 0.10 C rss 10 0.01 0 5 10 15 20 25 V D S - Volts 30 35 40 1 10 100 Pulse Width - milliseconds 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.